CMOS DATA BOOK

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This book presents technical data for the broad line of CMOS logic integrated Motorola's entire MC series CMOS products, although this book contains. Need a book similar to the TTL Databook, that contains all of the (and ) series IC’s datasheets, but there doesn’t appear to be one. From Did TI ever make a series data book? CMOS databook ( series) PDFs PCB masks Fig VCO PCB mask Fig LFO PCB mask Fig 2. RCA CMOS I.C. Databook SSDC RCA Corporation Acrobat 7 Pdf Mb. Scanned by artmisa using Canon DRC +.


Cmos Data Book

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The datasheet collection for the ICs of the CMOS series. Watch now! The ideal reference book to build up a digital circuit fast. The original The data sheets are sorted on the one hand by IC-number and by function. In order to quickly. CLICK HERE for the TTL and CMOS logic listings! CLICK HERE for links to . 8K x 8 CMOS EEPROM. Microchip .. Quad 2 Input Data Selector/. Multiplexer. This DATABOOK contains detailed information on. CMOS microprocessors, microcomputers, memories and peripherals currently available from RCA Solid.

All chips in this section have two gates, noted by the "2G" in the part numbers. All chips in this section have three gates, noted by the "3G" in the part numbers.

From Wikipedia, the free encyclopedia. This article includes a list of references , but its sources remain unclear because it has insufficient inline citations. Please help to improve this article by introducing more precise citations. June Learn how and when to remove this template message. Fairchild Semiconductor. November 25, Retrieved July 27, ON Semiconductor.

June Archived PDF from the original on July 9, See also: List of books about series integrated circuits. Retrieved from " https: Digital electronics Electronic design Electronics lists Integrated circuits.

CMOS Databook

Hidden categories: Articles lacking in-text citations from June All articles lacking in-text citations. Namespaces Article Talk. Hanchett, C. ST October Masuhara, T. Minato, O. Sasaki, T.

SIMPLE • DIGITAL • FAST

Sakai, Y. Kubo, M.

Yasui, T. PDA signal selectively sets the first stage of the input buffer when signals are not being received by the invention. In this case the pad level could be floating in a range of values and not disturb the logic level within the device.

This also minimizes power consumption for pads that actually do float. This power savings is accomplished in the invention by the use of a NOR gate consisting of transistors , , , and in FIG.

TTL CMOS Databook Program

When reading signals from the PAD, PDA signal is low and does not affect the logic values received by the input buffer. The PDA signal can control all pins or selected groups of pins within an integrated circuit with the use of either soft-ware control register bit s or hard-ware a dedicated pin. This reduces power consumption by ignoring signals at the pad and forcing the NAND output to a fixed state.

Translation first starts by converting the core logic level signals into the highest power supply level of the system. To select the desired output logic level, the final P channel transistor has GVDD tied to its source Other logic gates before the final output stage of transistors and are also powered by NVDD.

If this were not the case, the voltage present at gates and of transistors and would not provide the proper drive levels to meet output specifications of VOH, VOL, rise, fall, or propagation delay. Transistors and are off and do not source or sink current into or out of the PAD.

Logical zero also referred to as a low logic level is represented by 0 V and does not require translation. This is accomplished by the use of voltage translators. The N-type transistor threshold in a typical semiconductor fabrication process varies from 0.

Issue Details

The N-type transistors , , , and will turn on for a voltage applied to their respective gates that is greater than the N-type transistor threshold voltage. This places an operational limit on the core voltage CVDD such that it must be greater than the N-type transistor threshold voltage of the specified semiconductor process.

Typical maximum N-type transistor threshold voltage is 1.

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N-type transistors , , , and and P-type transistors , , , and are respectively ratioed such that for a worst case value of CVDD equal to 3. This assures that the design of the voltage translator can translate 3. Thus, CVDD can be set to a 3.

Bibliographic Information

The cross wired transistors of , , , and logically operate similar to a pair of cross coupled inverters in a RAM cell or latch.

The only difference is that both outputs of this voltage translator are used to enable or disable the tristate output buffer. Power Transistors Outputs of the two voltage translators are input to a NAND gate, consisting of transistors , , , and , and a NOR gate, consisting of transistors , , , and These two logic gates are the pre-drivers for the power transistors and facilitate the tristate mechanism as well as provide the correct polarity of DO to the PAD.

The P-type power transistor can be illustrated by FIG. The gate connection is tied to the output of the NAND pre-driver. The drain connection is tied to the PAD at output Recall that NVDD is the highest voltage power supply within the system.

Thus this level of voltage can be applied to gates and of the power transistors and This is the case regardless whether GVDD is set to 3.

The N-type power transistor operates similar to the prior-art method of switching characteristics. Assume that in FIG. Inherent to the P-type transistor are diodes between the drain and n-well as well as the source and n-well. The drain diode is illustrated in FIG. Both of these diodes will not turn on forward bias until the drain or source is typically 0.

The drain diode is normally reversed bias so that it will not draw current from the pin until the voltage on the PAD is greater than a diode threshold above NVDD. Recall that the invention requires that NVDD be the highest voltage power supply.

In general, this configuration of the P-type power transistor, allows the PAD voltage to reach a level of NVDD plus a diode threshold without an increase in power consumption.

This configuration of the P-type transistor is an element of the invention that conserves power for a system of mixed power supply voltages. In comparison to the invention, the prior-art P-type power transistor's n-well and source are both tied to VDD as illustrated in FIG.

If the PAD input voltage is 0. Also the prior-art P-type power transistor can not source a different power supply voltage other than VDD. In the case that VDD is set to 3.

Thus the invention provides bidirectional voltage translation and low power consumption for signals input to an integrated circuit that may be greater than the desired output logic levels.

For example the invention can support a data bus that uses both 3. In the prior-art of FIG. In the case that the first peripheral CMOS device drives the data bus it attempts to output a logical one at a 5 V level. The device containing the invention allows a 5 V logical one without consuming power. However, the second peripheral CMOS device operating at 3. In the case that the device containing the invention is driving the data bus, a logical one will be represented by an output of 3.

This properly drives the second peripheral device such that its input buffer is at its ideal value without being overdriven where its input protection diodes would turn on and sink current.

The first peripheral device will consume some power because it does not have its input driven to the ideal value of 5 V. This is similar to the case that the second peripheral CMOS device is driving the data bus.

In this manner, the device containing the invention can interface with peripheral components operating with different DC supply voltages. PADs can be selectively grouped on the same integrated circuit to support different output voltages at different ports of the chip.

For example in FIG. Recall that by lowering the power supply voltage such as from 5. Thus, assume CVDD is set to 3. Assume that the highest system voltage is 5 V and that NVDD is set to this value and distributed to transistors connected to this supply.

Selectively grouping bonding pads similar to this manner allows the integrated circuit to support multiple external logic levels on the same silicon die. In the example above, enabling the input buffer and the output buffer at a group of pins that use the invention can be accomplished by an enable register which can be set by software.

The register contains bits that would turn on the output buffer of the respective groups of pins. Alternatively the output buffers or input receivers can be enabled by hardware by the use of enable input pins or by a control signal directly received from the core logic Input buffers can be hardware enabled by an input buffer enable pin as well.

The core logic DC supply voltage CVDD is supplied through bonding pad into the core logic as well as other areas of the integrated circuit where necessary. While a preferred embodiment of the present invention has been disclosed and described in detail herein, it will be obvious to those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope thereof.All chips in the following sections are available 4 to 12 pin surface mount packages.

Input protection resistor is used to protect the gate oxide of transistors and from static charges that suddenly occur from handling a device. In addition, expers will benefit from this reference book in numerous ways, be it on circuit, systems, or measurement issues. In the example above, enabling the input buffer and the output buffer at a group of pins that use the invention can be accomplished by an enable register which can be set by software.

Parts in this section have a pin count of 14 pins or more.

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